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Power

A New Generation of GaN Power ICs Mimic Silicon MOSFETs

What’s inside a new family of GaN power FETs that Cambridge GaN Devices contends can be driven like a silicon MOSFET?

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Special Report: Sensors and AFEs

Electronic Design explores the challenges and opportunities for future development of sensors and analog front ends in the upcoming Sensors and AFEs Week, starting June 3.

Ideas for Design Vol. 3, No. 10 (Download)

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